1.013x105 0.61x105 9,810 4,900 structure appearance application function absolute maximum ratings a no. item symbol ratings unit note 1 2 3 4 5 operating ambient temperature storage temperature power supply voltage power supply current power dissipation topr tstg vcc icc pd c c v a w operating ambient pressure popr operating constant acceleration gopr operating shock sopr 6 7 8 1 pa m / s 2 silicon monolithic bipolar ic sil-12 pins plastic package (fp-12s power type with fin) -25 ~ +75 -55 ~ +150 24 audio 25w (6 w ) x 2ch btl power amplifier built-in standby and muting features incorporating various protection circuits note: 1) without input signal, vcc is up to 27v 2) ta = 75c with infinite heatsink 2 8.0 37.5 operating supply voltage range vcc 8.0 v ~ 20.0 v m / s 2 product specifications semiconductor company, matsushita electric industrial co., ltd. fmsc-psda-002-01 rev.1 preparedchecked approved eff. date eff. date eff. date eff. date AN7580 ref no. total page page no. a-1 81 09-jul-2001
standby current a db i stb rr 7 10 11 vr=1vrms, fr=120hz, rg=20k w 60 1 1 1 ripple rejection vin=0mv 1 12 channel balance cb vin=20mv 0 db - - 1 10 muting effects mt 1 vin=20mv 80 db 1 70 50 2 - vin=0mv, rg=20k w b no. item symbol test cct. condition limit min typ max unit note quiescent circuit current total harmonic distortion ma % w icq vno 1 2 3 4 5 thd vin=0mv thd=10% mvrms 150 gvc db output noise voltage 1 1 1 1 1 voltage gain 0.27 vin=20mv 40 0.07 note : 1) with a filter band 20hz ~20khz (12 db/oct) used. 1 po1 vin=20mv - 0.5 42 38 0.4 12 15 - - electrical characteristics < vcc = 12v, r l = 4w, freq. = 1 khz, 2 channel outputs > (unless otherwise specified, the ambient temperature is 25c2c) 300 2 2) with a filter band 400hz ~30khz used. -1 8 1 channel crosstalk ct vin=20mv, rg =20k w 70 db 55 9 1 output offset voltage voff rg=20kw 0 mv 350 -350 - - 2 maximum output power 1 w 6 vcc=18v, rl=6 w ,thd=10% 1 po2 - 21.5 25 maximum output power 2 product specifications semiconductor company, matsushita electric industrial co., ltd. fmsc-psda-002-01 rev.1 preparedchecked approved eff. date eff. date eff. date eff. date AN7580 ref no. total page page no. b-1 82 09-jul-2001
description of test circuits and test methods [test circuit 1] note : * stb 'off' means 5v. mute 'off' means 0v. 8 6 9 12 7 2 5 4 AN7580 1 off rl 4 w stb on 5v vin1 vout1 20kw mute 20kw vin2 vout2 off + 33 on rl 4 w 3v 10 + 2200 vcc 3 11 8.2kw 51kw + 10 product specifications semiconductor company, matsushita electric industrial co., ltd. fmsc-psda-002-01 rev.1 preparedchecked approved eff. date eff. date eff. date eff. date AN7580 ref no. total page page no. c-1 83 09-jul-2001
circuit function block diagram 9 pin no. pin descriptions 1 2 3 4 6 5 pin descriptions pin no. pin descriptions 1 8 6 12 3 7 2 5 4 10 11 vcc ch1 +ve phase output ch1 output gnd ch1 -ve phase output ch1 input standby 7 8 9 10 12 11 pre gnd ch2 input mute ch2 -ve phase output ch2 +ve phase output ch2 output gnd + - + - standby circuit mute + - ref + - + - - + protection circuit thermal shutdown load short vcc short ground short aso protect product specifications semiconductor company, matsushita electric industrial co., ltd. fmsc-psda-002-01 rev.1 preparedchecked approved eff. date eff. date eff. date eff. date AN7580 ref no. total page page no. d-1 84 09-jul-2001
product specifications semiconductor company, matsushita electric industrial co., ltd. fmsc-psda-002-01 rev.1 preparedchecked approved eff. date eff. date eff. date eff. date AN7580 ref no. total page page no. e 85 package name unit : mm fp-12s 29.96 0.3 28.0 0.3 20.00.1 0.6 6.4 0.3 ? 3.6 7.7 0.3 7.8 0.3 0.6 0.1 2.54 3.5 0.3 0.25 +0.1-0.05 1.2 0.1 r1.8 1 12 companyinsignia datecode nameof item 29.6 0.3 09-jul-2001
product specifications semiconductor company, matsushita electric industrial co., ltd. fmsc-psda-002-01 rev.1 preparedchecked approved eff. date eff. date eff. date eff. date ref no. total page page no. f-1 86 (structure description) package fp-12s AN7580 6 5 1 4 2 3 chip surface passivationlead frame material inner lead surface process outer lead surface process chip mounting method wire bonding method wire material, diameter mold materialmolding method fin material sin,fe group, ag plating, solder plating, ag paste, thermalsonic bonding, au, epoxy, transfer mold, cu group others ( )others ( ) others ( ) others ( ) others ( ) others ( ) others ( ) others ( ) others ( ) others ( ) 1 2 , 6 psg,cu group, au plating, solder dip, au-si alloy, solder, diameter 38 m multiplunger mold, 2 6 3 4 4 5 5 7 09-jul-2001
stb 51k 10 application circuit 10 12 5 9 out1 3 11 7 1 vcc 2200 vcc 12v 2 4 in 1 8 in 2 6 input gnd output2 gnd rl4w out2 rl4w output1 gnd out2 out1 40db 40db 40db 40db vref mute stb stb 'off' mute 'on' mute 'off' stb 'on' 5v 0v 0v 3v mute 8.2k 33 product specifications semiconductor company, matsushita electric industrial co., ltd. fmsc-psda-002-01 rev.1 preparedchecked approved eff. date eff. date eff. date eff. date AN7580 ref no. total page page no. g-1 87 09-jul-2001
pd - ta curves (1) tc = ta, 62.5w ( qj-c = 2 c/w ) (2) 20.83w ( qf = 4.0 c/w ) with a 100cm x 3mm al heat sink (black colour coated) or a 200cm x 2mm al heat sink (not lacquered) 2 2 (3) 15.63w ( qf = 6.0 c/w ) with a 100cm x 2mm al heat sink (not lacquered) (4) 3.0w at ta = 25c ( q j-a = 42c/w ) without heat sink 2 power dissipation pd ( w ) ambient temperature ta ( c ) 80 70 60 10 0 50 40 30 20 0 25 50 75 100 125 150 20.8w 15.6w 3.0w (1) (3) 62.5w (4) (2) product specifications semiconductor company, matsushita electric industrial co., ltd. fmsc-psda-002-01 rev.1 preparedchecked approved eff. date eff. date eff. date eff. date AN7580 ref no. total page page no. g-2 88 09-jul-2001
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